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| 2SD2531 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2531
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0 (Max)@ IC= 2.5A
·High Power Dissipation-
: PC= 25W@ TC= 25â
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
1
A
2
W
25
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
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