2SD226 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD226
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=30mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
ICBO
Collector Base Cutoff Current
VCB=50V; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VBE(ON) Base-Emitter On Voltage
IC=1.5A;VCE= 3V
hFE-1*
DC Current Gain
IC= 1A; VCE= 3V
hFE-2*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 3A; VCE= 3V
MIN MAX UNIT
40
V
8
V
0.1 mA
0.1 mA
0.7
V
1.4
V
50 200
20
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