2SD226 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD226
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
5
A
PC
Collector Power Dissipation@TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc website：www.iscsemi.com
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