2SD218 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD218
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 0.7A
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A; VCE= 5V
hFE-2
DC Current Gain
IC= 7A; VCE= 5V
fT
Current-Gain—Bandwidth Product
 hFE-1Classifications
M
L
K
IC= 0.2A; VCE= 10V
30-60 45-90
60-120
MIN TYP. MAX UNIT
0.6 1.5
V
1.2 1.5
V
0.5 mA
0.5 mA
30 60 120
20 40
10
MHz
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