2SD218 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD218
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V (Max.)@ IC= 7A
APPLICATIONS
·Low saturation voltage
·Excellent current gain linearity
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
2
A
60
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}