2SD2156 Datasheet, PDF (2/2 Pages) Nais(Matsushita Electric Works) – SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2156
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-Emitter breakdown voltage IC=25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.05A
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= 80V; IE= 0
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 12V,f= 10MHz
MIN TYP. MAX UNIT
60
V
1.0
V
100 μA
100 μA
100 μA
500
2500
50
MHz
 hFE-Classifications
Q
P
O
500-1000 800-1500 1200-2500
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