2SD2156 Datasheet, PDF (1/2 Pages) Nais(Matsushita Electric Works) – SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2156
DESCRIPTION
·High DC Current gain
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
Collector Power Dissipation
@ Ta=25℃
Junction Temperature
Storage Temperature Range
80
V
60
V
6
V
3
A
6
A
1
A
25
W
2
150
℃
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}