2SD213 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD213
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0
MIN MAX UNIT
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.5
V
2.0
V
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
1.0 mA
ICBO
Collector Cutoff Current
VCB= 110V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5.0V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
fT
Current Gain-Bandwidth Product
IC= 5A ; VCE= 4V
IC= 0.5A ; VCE= 10V;f= 1.0MHz
60 200
30
8.0
MHz
isc website：www.iscsemi.com²
isc & iscsemi is registered trademark