2SD213 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD213
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min.)
·Low Collector Saturation Voltage-
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
20
A
100
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
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