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| 2SD2029 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high power amplification) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE
Base-emitter voltage
IC=8A ; VCE=5V
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=8A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V;f=1MHz
COB
Collector output capacitance
IE=0;f=1MHz;VCB=10V
 hFE-2 classifications
Q
S
P
60-120
80-160 100-200
Product Specification
2SD2029
MIN TYP. MAX UNIT
160
V
2.0
V
1.8
V
50
A
50
A
20
60
200
20
20
MHz
210
pF
2
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