2SD2029 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high power amplification)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2029
DESCRIPTION
With TO-3PL package
Complement to type 2SB1347
Wide area of safe operation
High transition frequency
APPLICATIONS
Optimum for the output stage of a
Hi-Fi audio amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
T_a=25
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
160
160
5
12
20
3.5
120
150
-55~150
UNIT
V
V
V
A
A
W