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| 2SD1913 Datasheet, PDF (2/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=â
V(BR)EBO Base-emitter breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A ; IB=0.2A
VBE
Base-emitter voltage
IC=0.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=40V;IE=0
IEBO
Emitter cut-off current
VEB=4V;IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V; f=1MHz
 hFE-1 classifications
Q
R
S
70-140 100-200 140-280
Product Specification
2SD1913
MIN TYP. MAX UNIT
60
V
60
V
6
V
0.4
1.0
V
0.8
1.0
V
0.1
mA
0.1
mA
70
280
20
100
MHz
40
pF
2
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