2SD1913 Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1274
·High reliability.
·High breakdown voltage
·Low saturation voltage.
·Wide area of safe operation
APPLICATIONS
·60V/3A low-frequency power amplifier
·General power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Product Specification
2SD1913
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
60
60
6
3
8
20
2
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃