2SD1790 Datasheet, PDF (2/2 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(± 4A NPN)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1790
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 2mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 1A, VCE= 3V
fT
Current-Gain—Bandwidth Product IC= 0.4A; VCE= 10V
Switching Times; Resistive Load
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 1A; IB1= -IB2= 2mA
VBB2= 4V; RL= 25Ω
MIN TYP. MAX UNIT
1.5
V
2.0
V
0.1
mA
0.1
mA
5
mA
1500
30000
20
MHz
2
μs
12
μs
5
μs
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