2SD1790 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(± 4A NPN)

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1790
DESCRIPTION
·Low Collector Saturation Voltage
·High DC Current Gain
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
50-70
V
VCBO
Collector-Base Voltage
50-70
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continunous
4
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continunous
0.3
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
0.5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W
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