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| 2SD1770 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1770
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.3A; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 10V
hFE-2
DC Current Gain
IC= 0.3A; VCE= 10V
fT
Current-GainâBandwidth Product
IC= 0.1A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1MHz
 hFE-1 Classifications
Q
P
60-140 100-240
MIN TYP. MAX UNIT
150
V
6
V
1.0
V
1.0
V
50 μA
50 μA
60
240
50
20
MHz
27
pF
isc Websiteï¼www.iscsemi.cn
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