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| 2SD1770 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1770
DESCRIPTION
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·Complement to Type 2SB1190
APPLICATIONS
·Power amplifier applications.
·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
Total Power Dissipation
@ TC=25â
PC
Total Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
25
W
1.4
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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