2SD1758 Datasheet, PDF (2/3 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1758
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE=3V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 50mA; VCE= 5V
MIN TYP. MAX UNIT
0.8
V
32
V
5
V
1.0
μA
1.0
μA
82
390
30
pF
100
MHz
 hFE Classifications
P
Q
R
82-180 120-270 180-390
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