2SD1758 Datasheet, PDF (1/3 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1758
DESCRIPTION
·Large current capacitance
·Low Vce(sat)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·DC/DC converter,relay drivers,lamp drivers,motor
drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
PC
Collector Power Dissipation
1.2
W
TJ
Junction Temperature
Tstg
Storage Temperature Range
150
℃
-55~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}