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| 2SD1404 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1404
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICES
Collector Cutoff Current
VCE= 250V; VBE= 0
hFE
DC Current Gain
IC= 5A ; VCE= 1.5V
fT
Current-GainâBandwidth Product IC= 0.2A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 6A
tf
Fall Time
ICP= 5A; IB1(end)= 0.5A
MIN TYP. MAX UNIT
150
V
300
V
6
V
1.5
V
1.5
V
1
mA
10
18
MHz
1.8
V
1.0 μs
isc Websiteï¼www.iscsemi.cn
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