2SD1404 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current Capability
·High Collector Power Dissipation Capability
·Built-in Damper Diode
APPLICATIONS
·B/W TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
300
V
V_CEO Collector-Emitter Voltage
150
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
7
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
T_a=25℃
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
2
A
2
W
25
150
℃
T_stg
Storage Ttemperature Range
-55~150 ℃
isc Product Specification
2SD1404
isc Website：www.iscsemi.cn