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| 2SD1371 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – High Voltage | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1371
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
ICBO
Collector Cutoff Current
VCB= 300V; VBE= 0
hFE
DC Current Gain
IC= 0.3A; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 0.3A; VCE= 10V
MIN TYP. MAX UNIT
300
V
7
V
1.0
V
1.5
V
0.1 mA
100 μA
35
5
MHz
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