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2SD1371 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Voltage
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1371
DESCRIPTION
·High Voltage
·High Speed Switching
·High Power Dissipation
APPLICATIONS
·Designed for switching mode power supply and electronic
ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
2
A
40
W
150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃/W
isc website:www.iscsemi.cn
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