2SD1204 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1204
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VB CEO(SUS)
Collector-Emitter Sustaining Voltage
I = CB
B
50mA;
I = BB
B
0
400
V
VB CE(sat)-1
Collector-Emitter Saturation Voltage
I = CB
B
8
A;
I = BB
B
100mA
1.6
V
VB CE(sat)-2
Collector-Emitter Saturation Voltage
I = CB
B
10
A;
I = BB
B
250mA
1.8
V
VB CE(sat)-3
Collector-Emitter Saturation Voltage
I = CB
B
12
A;
I = BB
B
300mA
2.0
V
VB BE(sat)-1 Base-Emitter Saturation Voltage
I = CB
B
8
A;
I = BB
B
100mA
2.2
V
VB BE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
I = CB
B
10
A;
I = BB
B
250mA
V = CE B
B
500V;VB BEB =
0
V = CE B
B
500V;VB BEB =
0;TB jB =
125℃
V = CE B
B
400V;
I = BB
B
0
2.5
V
0.1
0.5
mA
0.1 mA
IEBO
Emitter Cutoff Current
VB EB=
5V;
I = CB
B
0
20
mA
hFE-1
DC Current Gain
I = CB
B
5A
;
VCE=
3V
750
hFE-2
DC Current Gain
I = CB
B
15A
;
VCE=
3V
100
VECF
C-E Diode Forward Voltage
IF= 10A
2.5
V
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