2SD1204 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1204
DESCRIPTION
·Low Collector Saturation Voltage
·High DC Current Gain
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
500
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
7
IC
Collector Current
15
ICM
Collector Current-peak
30
IB
Base Current
1
PC
Collector Power Dissipation
@TC=25℃
100
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
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