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| 2SD1195 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1195
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= â
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2.5A; VCE= 3V
fT
Current-GainâBandwidth Product
IC= 2.5A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A, IB1= -IB2= 4mA
RL= 25Ω; VCC= 50V;
PW= 50μs; Duty Cycleâ¤1%
MIN TYP. MAX UNIT
100
V
110
V
1.5
V
2.0
V
100 μA
3.0 mA
1500
20
MHz
0.6
μs
4.8
μs
1.6
μs
isc Websiteï¼www.iscsemi.cn
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