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| 2SD1195 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1195
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High DC Current Gain
: hFE= 1500(Min) @IC= 2.5A
·Low Saturation Voltage
·Complement to Type 2SB885
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
1.75
W
35
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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