2SD1192 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1192
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞
70
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
60
V
VCE(_sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA
1.5
V
VBE(_sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 5A; IB= 10mA
VCB= 40V; IE= 0
2.0
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE
DC Current Gain
IC= 5A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 5A ; VCE= 5V
2000
20
MHz
Switching times
t_on
Turn-on Time
t_stg
Storage Time
t_f
Fall Time
0.6
μs
IC= 5A , IB1= -IB2= 10mA
RL= 4Ω; VCC= 20V;
3.0
μs
PW= 50μs; Duty Cycle≤1%
1.8
μs
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