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| 2SD1192 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1192
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·High DC Current Gain
: hFE= 2000(Min) @IC= 5.0A
·Low Saturation Voltage
·Complement to Type 2SB882
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
15
A
1.75
W
40
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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