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| 2SD1187 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1187
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 0.3A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.5
V
1.4
V
10 μA
10 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
70
240
hFE-2
DC Current Gain
IC= 6A; VCE= 1V
30
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-GainâBandwidth Product
IC= 1A; VCE= 4V
350
pF
10
MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.3A; RL= 5Ω;
VCC= 30V;
PW=20μs; Duty Cycleâ¤1%
0.5
μs
2.5
μs
0.8
μs
 hFE-1 Classifications
O
Y
70-140 120-240
isc Websiteï¼www.iscsemi.cn
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