2SD1187 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1187
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 80V(Min)
·Low Collector Saturation Voltage-
: V_CE(sat)= 0.5V(Max.) @ I_C= 6A
·High Power Dissipation
APPLICATIONS
·High power switching applications
·DC-DC converter and DC-AC inverter applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
100
V
V_CEO
Collector-Emitter Voltage
80
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
10
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
2
A
80
W
150
℃
-55~150
℃
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