2SD1183 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1183
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
MIN TYP. MAX UNIT
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
1200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 1200V; IE=0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0
V
1.5
V
100 μA
100 μA
hFE -1
DC Current Gain
IC= 0.3A; VCE= 5V
14
hFE -2
DC Current Gain
tf
Fall Time
tstg
Storage Time
IC= 1A; VCE= 5V
IC= 1A, IB1=IB2= 0.3A
10
30
1.0 μs
10 μs
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