2SD1183 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1183
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1200V (Min)
·High Reliability
·Wide area of safe operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
3
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation
@ TC TC=25℃
TJ
Junction Temperature
5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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