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| 2SD1180 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=100 A; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=100 A ; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE
DC current gain
IC=150mA ; VCE=5V
Product Specification
2SD1180
MIN TYP. MAX UNIT
110
V
120
V
5
V
0.7
V
1.3
V
1.0
A
1.0
A
100
2
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