2SD1180 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1180
DESCRIPTION
With TO-126 package
Low collector saturation voltage
APPLICATIONS
Designed for use in audio and radio
frequency power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
T_a=25
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
120
110
5
1.5
2.5
1.2
20
150
-55~150
UNIT
V
V
V
A
A
W