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| 2SD1162 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1162
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 5mA
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 2V
hFE-2
DC Current Gain
IC= 3A ; VCE= 2V
Switching Times
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 3A; IB1= -IB2= 30mA;
RL= 50Ω,VCCâ150V
MIN TYP. MAX UNIT
300
V
1.5
V
2.0
V
10
μA
400
3000
100
1.0
μs
12
μs
6
μs
 hFE-1 Classifications
M
L
400-800
600-1200
K
1000-3000
isc Websiteï¼www.iscsemi.cn
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