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| 2SD1162 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1162
DESCRIPTION
·High DC Current Gain-
: hFE= 400(Min.)@IC= 2A
·High Switching Speed
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for high voltage, low speed switching industrial
use.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
5
A
ICM
Base Current-Peak
10
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
40
W
1.5
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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