2SD1139 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1139
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.05A
3.0
V
VBE(on) Base-Emitter On Voltage
IC= 50mA ; VCE= 4V
1.0
V
ICBO
Collector Cutoff Current
VCE= 200V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 50mA; VCE= 4V
60
320
hFE-2
DC Current Gain
IC= 500mA; VCE= 10V
60
COB
Output Capacitance
IE= 0; VCB= 100V; ftest= 1.0MHz
20
pF
 hFE-1 Classifications
B
C
D
60-120 100-200 160-320
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