2SD1139 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1139
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V (Min)
·Wide Area of Safe Operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier TV vertical
deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
5
A
1.8
W
30
150
℃
Tstg
Storage Temperature Range
-45~150
℃
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