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| 2SD1138 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=â
V(BR)EBO Emitter-base breakdown votage
IE=5mA; IC=0
VCEsat Collector-emitter saturation voltage IC=0.5 A;IB=50m A
VBE
Base-emitter voltage
IC=50mA ; VCE=4V
ICBO
Collector cut-off current
VCB=120V; IE=0
hFE-1
DC current gain
IC=50mA ; VCE=4V
hFE-2
DC current gain
IC=0.5A ; VCE=10V
COB
Output capacitance
IE=0 ;VCB=100V,f=1MHz
 hFE-1 classifications
B
C
D
60-120 100-200 160-320
Product Specification
2SD1138
MIN TYP. MAX UNIT
150
V
6
V
3.0
V
1.0
V
1
μA
60
320
60
20
pF
2
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