2SD1138 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1138
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SB861
APPLICATIONS
·Low frequency high voltage power
amplifier TV vertical deflection output
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CP
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25℃
T_C=25℃
VALUE
200
150
6
2
5
1.8
30
150
-45~150
UNIT
V
V
V
A
A
W
℃
℃