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| 2SD1133 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1133
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= â
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 50V ; IE= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 0.1A ; VCE= 4V
fT
Current-GainâBandwidth Product
IC= 0.5A ; VCE= 4V
MIN TYP. MAX UNIT
50
V
70
V
5
V
1.0
V
1.0
V
1
μA
60
320
35
7
MHz
 hFE-1 Classifications
B
C
D
60-120 100-200 160-320
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