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| 2SD1133 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1133
DESCRIPTION
·Collector Current: IC= 4A
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 2A
·High Collector Power Dissipation
·Complement to Type 2SB857
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
50
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
40
W
150
â
-45~150 â
isc Websiteï¼www.iscsemi.cn
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