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| 2SD113 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – SILICON NPN DEFFUSED JUNCTION TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD113
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= â
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 3A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 15A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 50V; ftest= 1.0MHz
fT
Current-GainâBandwidth Product IC= 1A; VCE= 10V
MIN TYP. MAX UNIT
80
V
10
V
1.5
V
2.5
V
2
mA
50 mA
50
300
10
400
pF
1.5
MHz
 hFE-1 Classifications
O
Y
50-150 100-300
isc Websiteï¼www.iscsemi.cn
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