2SD113 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON NPN DEFFUSED JUNCTION TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD113
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 80V (Min)
·High Power Dissipation
·High Current Capability
APPLICATIONS
·Audio power amplifier, power switching applications.
·DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
100
V
V_CEO
Collector-Emitter Voltage
80
V
V_EBO
Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
30
A
I_E
Emitter Current-Continuous
-30
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
5
A
200
W
150
℃
-65~150 ℃
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