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| 2SD1126 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1126
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= â
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB=B 10mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 120V; IE=0
ICEO
Collector Cutoff Current
VCE= 100V; RBE= â
hFE
DC Current Gain
IC= 5A; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 10A
Switching times
ton
Turn-on Time
toff
Turn-Off Time
IC= 5A, IB1= -IB2= 10mA
MIN TYP. MAX UNIT
120
V
7
V
1.5
V
3.0
V
2.0
V
3.5
V
100 μA
10
μA
1000
20000
3.0
V
0.8
μs
8.0
μs
isc Websiteï¼www.iscsemi.cn
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