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| 2SD1126 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1126
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 5A
·Low Saturation Voltage
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
15
A
50
W
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
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