2SD1124 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1124
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO
Collector - Base Breakdown Voltage _{IC= 0.1mA; IE= 0}
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A, IB= 30mA
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE -1
DC Current Gain
IC= 1A; VCE= 4V
hFE -2
DC Current Gain
IC= 4A; VCE= 4V
MIN TYP. MAX UNIT
6
V
80
V
80
V
2.0
V
3.0
V
2.5
V
0.1 mA
0.1 mA
5.0 mA
1000
500
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