2SD1124 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1124
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 1A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
12
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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