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| 2SD1117 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1117
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VB E(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
MIN TYP. MAX UNIT
40
V
40
V
7
V
1.2
V
2.0
V
10 μA
10 μA
60
240
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